Technische Details IPW60R041C6FKSA1 Infineon Technologies
Description: INFINEON - IPW60R041C6FKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 77.5 A, 0.041 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 77.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 481W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.041ohm.
Weitere Produktangebote IPW60R041C6FKSA1 nach Preis ab 12.46 EUR bis 30.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IPW60R041C6FKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 600V 77.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R041C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3 Type of transistor: N-MOSFET On-state resistance: 41mΩ Mounting: THT Power dissipation: 481W Polarisation: unipolar Technology: CoolMOS™ C6 Drain current: 77.5A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Kind of package: tube Case: PG-TO247-3 |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R041C6FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 77.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.96mA Supplier Device Package: PG-TO247-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 10 V |
auf Bestellung 8455 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R041C6FKSA1 | Infineon Technologies |
MOSFETs N-Ch 650V 77.5A TO247-3 CoolMOS C6 |
auf Bestellung 149 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R041C6FKSA1 | INFINEON |
Description: INFINEON - IPW60R041C6FKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 77.5 A, 0.041 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 77.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 481W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.041ohm |
auf Bestellung 399 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 77.5A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 77.5A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 13.85 EUR |
| 30+ | 12.46 EUR |
| IPW60R041C6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Mounting: THT
Power dissipation: 481W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 77.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Mounting: THT
Power dissipation: 481W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 77.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.85 EUR |
| 6+ | 14.59 EUR |
| 10+ | 13.86 EUR |
| IPW60R041C6FKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 10 V
Description: MOSFET N-CH 600V 77.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 10 V
auf Bestellung 8455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.02 EUR |
| 30+ | 17.09 EUR |
| 120+ | 14.7 EUR |
| 510+ | 13.42 EUR |
| IPW60R041C6FKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 650V 77.5A TO247-3 CoolMOS C6
MOSFETs N-Ch 650V 77.5A TO247-3 CoolMOS C6
auf Bestellung 149 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.67 EUR |
| 10+ | 19.6 EUR |
| 100+ | 16.86 EUR |
| 480+ | 14.83 EUR |
| 1200+ | 13.84 EUR |
| IPW60R041C6FKSA1 |
|
Hersteller: INFINEON
Description: INFINEON - IPW60R041C6FKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 77.5 A, 0.041 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 77.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 481W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.041ohm
Description: INFINEON - IPW60R041C6FKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 77.5 A, 0.041 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 77.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 481W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.041ohm
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 30.11 EUR |
| 10+ | 24.43 EUR |
| 12+ | 19.28 EUR |
| 50+ | 16.54 EUR |
| 100+ | 14.93 EUR |
| 250+ | 14.73 EUR |