Weitere Produktangebote IPW60R070P6XKSA1 nach Preis ab 4.02 EUR bis 10.65 EUR
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IPW60R070P6XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 53.5A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V Power Dissipation (Max): 391W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.72mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V |
auf Bestellung 1394 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R070P6XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER PRICE/PERFORM |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW60R070P6XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 53.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
Description: MOSFET N-CH 600V 53.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
auf Bestellung 1394 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.7 EUR |
| 30+ | 5.54 EUR |
| 120+ | 4.63 EUR |
| 510+ | 4.02 EUR |
| IPW60R070P6XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER PRICE/PERFORM
MOSFETs HIGH POWER PRICE/PERFORM
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.65 EUR |
| 10+ | 6.11 EUR |
| 100+ | 5.09 EUR |
| 480+ | 4.56 EUR |