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IPW60R075CPAFKSA1 Infineon Technologies


Infineon_IPW60R075CPA_DS_v02_00_EN-1227518.pdf
Hersteller: Infineon Technologies
MOSFETs AUTOMOTIVE_COOLMOS
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+16.68 EUR
10+14.29 EUR
100+11.92 EUR
240+11.21 EUR
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Technische Details IPW60R075CPAFKSA1 Infineon Technologies

Description: AUTOMOTIVE, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 3.5V @ 1.74mA, Power Dissipation (Max): 313W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V, Qualification: AEC-Q101, Grade: Automotive.

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IPW60R075CPAFKSA1 IPW60R075CPAFKSA1 Infineon Technologies IPW60R075CPA_Rev2.0_2010-02-15.pdf Description: AUTOMOTIVE
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 1.74mA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.99 EUR
30+10.7 EUR
120+9.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R075CPAFKSA1 IPW60R075CPA_Rev2.0_2010-02-15.pdf
Hersteller: Infineon Technologies
Description: AUTOMOTIVE
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 1.74mA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+17.99 EUR
30+10.7 EUR
120+9.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH