IPW60R099CPA Infineon Technologies

Description: IPW60R099 - 600V-800V N-CHANNEL, Power Dissipation (Max): 255W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 3.5V @ 1.2mA.