Weitere Produktangebote IPW60R099CPFKSA1 nach Preis ab 5.49 EUR bis 12.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPW60R099CPFKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R099CPFKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R099CPFKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R099CPFKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R099CPFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R099CPFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 31A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: PG-TO247-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V |
auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R099CPFKSA1 | Infineon Technologies |
MOSFETs N-Ch 600V 31A TO247-3 CoolMOS CP |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW60R099CPFKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 7.14 EUR |
| 30+ | 6.06 EUR |
| IPW60R099CPFKSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 7.14 EUR |
| 30+ | 5.93 EUR |
| IPW60R099CPFKSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 7.29 EUR |
| 30+ | 6.19 EUR |
| 120+ | 5.69 EUR |
| IPW60R099CPFKSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 7.31 EUR |
| 30+ | 6.07 EUR |
| 120+ | 5.49 EUR |
| IPW60R099CPFKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.42 EUR |
| 11+ | 7.14 EUR |
| IPW60R099CPFKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.92 EUR |
| 30+ | 6.92 EUR |
| 120+ | 5.83 EUR |
| IPW60R099CPFKSA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 31A TO247-3 CoolMOS CP
MOSFETs N-Ch 600V 31A TO247-3 CoolMOS CP
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.44 EUR |
| 10+ | 7.62 EUR |
| 100+ | 6.41 EUR |
| 480+ | 6 EUR |





