IPW60R099P6XKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 14+ | 5.23 EUR |
| 15+ | 4.95 EUR |
| 19+ | 3.82 EUR |
| 22+ | 3.3 EUR |
| 30+ | 3.06 EUR |
| 60+ | 2.86 EUR |
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Technische Details IPW60R099P6XKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 600V 37.9A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.21mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V.
Weitere Produktangebote IPW60R099P6XKSA1 nach Preis ab 2.84 EUR bis 8.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPW60R099P6XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R099P6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37.9A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V |
auf Bestellung 431 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R099P6XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER PRICE/PERFORM |
auf Bestellung 1207 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPW60R099P6XKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 6.92 EUR |
| 41+ | 3.53 EUR |
| 42+ | 3.42 EUR |
| 50+ | 3.31 EUR |
| 100+ | 2.84 EUR |
| IPW60R099P6XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.9 EUR |
| 30+ | 4.46 EUR |
| 120+ | 3.69 EUR |
| IPW60R099P6XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER PRICE/PERFORM
MOSFETs HIGH POWER PRICE/PERFORM
auf Bestellung 1207 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.85 EUR |
| 10+ | 5 EUR |
| 100+ | 4.14 EUR |
| 480+ | 4.03 EUR |
| 1200+ | 3.59 EUR |