IPW60R120P7XKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 95W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 95W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
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Technische Details IPW60R120P7XKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 600V 26A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 410µA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V.
Weitere Produktangebote IPW60R120P7XKSA1 nach Preis ab 2.85 EUR bis 7.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPW60R120P7XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 317 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW60R120P7XKSA1 |
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Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 317 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.69 EUR |
| 10+ | 4.52 EUR |
| 100+ | 3.73 EUR |
| 480+ | 2.85 EUR |