IPW60R125P6XKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 53+ | 2.77 EUR |
| 58+ | 2.49 EUR |
| 120+ | 2.35 EUR |
| 510+ | 2.28 EUR |
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Technische Details IPW60R125P6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 30A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V, Power Dissipation (Max): 219W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 960µA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V.
Weitere Produktangebote IPW60R125P6XKSA1 nach Preis ab 2.16 EUR bis 17.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPW60R125P6XKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R125P6XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 510 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R125P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R125P6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 960µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R125P6XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER PRICE/PERFORM |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R125P6XKSA1 | Infineon |
N-MOSFET 30A 600V 219W 0.125Ω IPW60R125P6XKSA1 IPW60R125P6 TIPW60r125p6 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| IPW60R125P6XKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 53+ | 2.78 EUR |
| 58+ | 2.44 EUR |
| 120+ | 2.27 EUR |
| 510+ | 2.16 EUR |
| IPW60R125P6XKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 510 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 162+ | 3.4 EUR |
| 500+ | 3.17 EUR |
| IPW60R125P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.66 EUR |
| 22+ | 3.36 EUR |
| 30+ | 3.06 EUR |
| 120+ | 2.62 EUR |
| 150+ | 2.56 EUR |
| IPW60R125P6XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.32 EUR |
| 30+ | 4.1 EUR |
| 120+ | 3.39 EUR |
| IPW60R125P6XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER PRICE/PERFORM
MOSFETs HIGH POWER PRICE/PERFORM
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.18 EUR |
| 10+ | 4.59 EUR |
| 100+ | 3.8 EUR |
| 480+ | 3.22 EUR |
| IPW60R125P6XKSA1 |
|
Hersteller: Infineon
N-MOSFET 30A 600V 219W 0.125Ω IPW60R125P6XKSA1 IPW60R125P6 TIPW60r125p6
Anzahl je Verpackung: 2 Stücke
N-MOSFET 30A 600V 219W 0.125Ω IPW60R125P6XKSA1 IPW60R125P6 TIPW60r125p6
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 17.08 EUR |