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Technische Details IPW60R160P6 Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 4.5V @ 750µA, Power Dissipation (Max): 176W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.
Weitere Produktangebote IPW60R160P6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPW60R160P6 | Infineon Technologies |
 Description: POWER FIELD-EFFECT TRANSISTORInput Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 4.5V @ 750µA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPW60R160P6 |
|
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: POWER FIELD-EFFECT TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH