IPW65R022CFD7AXKSA1 Infineon Technologies
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.33 EUR |
| 25+ | 15.40 EUR |
| 100+ | 14.34 EUR |
| 240+ | 14.33 EUR |
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Technische Details IPW65R022CFD7AXKSA1 Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.91mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V.
Weitere Produktangebote IPW65R022CFD7AXKSA1 nach Preis ab 15.42 EUR bis 27.68 EUR
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IPW65R022CFD7AXKSA1 | Hersteller : Infineon Technologies |
 Description: AUTOMOTIVE_COOLMOS PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V |
auf Bestellung 242 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R022CFD7AXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 96A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| IPW65R022CFD7AXKSA1 | Hersteller : Infineon Technologies |
SP003793206 |
Produkt ist nicht verfügbar |