IPW65R029CFD7XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
| Anzahl | Privatkunde |
|---|---|
| 15+ | 12.4 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
15 Stücke
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Technische Details IPW65R029CFD7XKSA1 Infineon Technologies
Description: INFINEON - IPW65R029CFD7XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 69 A, 0.024 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 69A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 305W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: CoolMOS CFD7, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.024ohm.
Weitere Produktangebote IPW65R029CFD7XKSA1 nach Preis ab 12.4 EUR bis 28.11 EUR
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IPW65R029CFD7XKSA1 | Infineon Technologies |
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R029CFD7XKSA1 | Infineon Technologies |
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R029CFD7XKSA1 | Infineon Technologies |
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R029CFD7XKSA1 | Infineon Technologies |
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R029CFD7XKSA1 | Infineon Technologies |
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R029CFD7XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 136 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R029CFD7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 69A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Power Dissipation (Max): 305W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-TO247-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R029CFD7XKSA1 | INFINEON |
Description: INFINEON - IPW65R029CFD7XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 69 A, 0.024 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 69A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 305W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS CFD7 productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.024ohm |
auf Bestellung 391 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPW65R029CFD7XKSA1 |
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Hersteller: Infineon Technologies
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 12.4 EUR |
| IPW65R029CFD7XKSA1 |
|
Hersteller: Infineon Technologies
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.85 EUR |
| IPW65R029CFD7XKSA1 |
|
Hersteller: Infineon Technologies
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.85 EUR |
| IPW65R029CFD7XKSA1 |
|
Hersteller: Infineon Technologies
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 14.22 EUR |
| IPW65R029CFD7XKSA1 |
|
Hersteller: Infineon Technologies
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 15.96 EUR |
| IPW65R029CFD7XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.53 EUR |
| 10+ | 14.61 EUR |
| 100+ | 14.24 EUR |
| IPW65R029CFD7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 69A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Description: MOSFET N-CH 650V 69A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.97 EUR |
| 30+ | 15.76 EUR |
| 60+ | 14.54 EUR |
| IPW65R029CFD7XKSA1 |
|
Hersteller: INFINEON
Description: INFINEON - IPW65R029CFD7XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 69 A, 0.024 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 69A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 305W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS CFD7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.024ohm
Description: INFINEON - IPW65R029CFD7XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 69 A, 0.024 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 69A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 305W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS CFD7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.024ohm
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 28.11 EUR |
| 10+ | 24.57 EUR |
| 12+ | 18.55 EUR |
| 50+ | 15.42 EUR |
| 100+ | 14.38 EUR |
| 250+ | 14.3 EUR |