| Anzahl | Preis |
|---|---|
| 1+ | 13.71 EUR |
| 10+ | 13.69 EUR |
| 25+ | 10.17 EUR |
| 100+ | 10 EUR |
| 240+ | 9.98 EUR |
| 480+ | 9.36 EUR |
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Technische Details IPW65R029CFD7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 69A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: PG-TO247-3, Vgs(th) (Max) @ Id: 4.5V @ 1.79mA, Power Dissipation (Max): 305W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IPW65R029CFD7XKSA1 nach Preis ab 11.3 EUR bis 21.72 EUR
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IPW65R029CFD7XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 69A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Power Dissipation (Max): 305W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW65R029CFD7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 69A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 650V 69A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.72 EUR |
| 30+ | 13.17 EUR |
| 120+ | 11.3 EUR |