IPW65R045C7FKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 16+ | 9.38 EUR |
| 30+ | 8.77 EUR |
| 120+ | 8.49 EUR |
| 510+ | 8.22 EUR |
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Technische Details IPW65R045C7FKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 46A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3-1, Vgs(th) (Max) @ Id: 4V @ 1.25mA, Power Dissipation (Max): 227W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IPW65R045C7FKSA1 nach Preis ab 7.81 EUR bis 14.66 EUR
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IPW65R045C7FKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 837 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R045C7FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 46A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-1 Vgs(th) (Max) @ Id: 4V @ 1.25mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 2110 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW65R045C7FKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 9.41 EUR |
| 30+ | 8.6 EUR |
| 120+ | 8.2 EUR |
| 510+ | 7.81 EUR |
| IPW65R045C7FKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 650V 46A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 2110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.66 EUR |
| 30+ | 8.76 EUR |
| 120+ | 8.24 EUR |