IPW65R110CFDFKSA2 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 240+ | 7.68 EUR |
| 480+ | 6.43 EUR |
| 1200+ | 5.89 EUR |
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Technische Details IPW65R110CFDFKSA2 Infineon Technologies
Description: INFINEON - IPW65R110CFDFKSA2 - Leistungs-MOSFET, n-Kanal, 650 V, 31.2 A, 0.099 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 31.2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 277.8W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: CoolMOS CFD2, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.099ohm, SVHC: No SVHC (27-Jun-2018).
Weitere Produktangebote IPW65R110CFDFKSA2 nach Preis ab 6.06 EUR bis 14.17 EUR
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IPW65R110CFDFKSA2 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 31.2A; 277.8W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 31.2A Power dissipation: 277.8W Case: TO247-3 On-state resistance: 0.11Ω Mounting: THT Gate charge: 118nC Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R110CFDFKSA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R110CFDFKSA2 | INFINEON |
Description: INFINEON - IPW65R110CFDFKSA2 - Leistungs-MOSFET, n-Kanal, 650 V, 31.2 A, 0.099 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 31.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 277.8W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS CFD2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.099ohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPW65R110CFDFKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 31.2A; 277.8W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 31.2A
Power dissipation: 277.8W
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 118nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 31.2A; 277.8W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 31.2A
Power dissipation: 277.8W
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 118nC
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.69 EUR |
| 14+ | 6.26 EUR |
| IPW65R110CFDFKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Description: MOSFET N-CH 650V 31.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.3 EUR |
| 30+ | 7.63 EUR |
| IPW65R110CFDFKSA2 |
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Hersteller: INFINEON
Description: INFINEON - IPW65R110CFDFKSA2 - Leistungs-MOSFET, n-Kanal, 650 V, 31.2 A, 0.099 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 31.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 277.8W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS CFD2
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.099ohm
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IPW65R110CFDFKSA2 - Leistungs-MOSFET, n-Kanal, 650 V, 31.2 A, 0.099 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 31.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 277.8W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS CFD2
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.099ohm
SVHC: No SVHC (27-Jun-2018)
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 14.17 EUR |
| 29+ | 8.03 EUR |
| 100+ | 6.06 EUR |