IPW65R190E6 Infineon Technologies
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 78+ | 2.01 EUR |
| 81+ | 1.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPW65R190E6 Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 730µA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V.
Weitere Produktangebote IPW65R190E6 nach Preis ab 3.05 EUR bis 3.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
IPW65R190E6 | Hersteller : Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 730µA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V |
auf Bestellung 539 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
 |
IPW65R190E6 | Hersteller : Infineon Technologies |
MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS E6 |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |