IPW65R230CFD7AXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 193+ | 3.51 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
193 Stücke
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Technische Details IPW65R230CFD7AXKSA1 Infineon Technologies
Description: 650V COOLMOS CFD7A SJ POWER DEVI, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 260µA, Supplier Device Package: PG-TO247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote IPW65R230CFD7AXKSA1 nach Preis ab 3.25 EUR bis 8.52 EUR
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IPW65R230CFD7AXKSA1 | Infineon Technologies |
MOSFETs AUTOMOTIVE_COOLMOS |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R230CFD7AXKSA1 | Infineon Technologies |
Description: 650V COOLMOS CFD7A SJ POWER DEVI Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPW65R230CFD7AXKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs AUTOMOTIVE_COOLMOS
MOSFETs AUTOMOTIVE_COOLMOS
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.52 EUR |
| 10+ | 5.13 EUR |
| 100+ | 3.88 EUR |
| 480+ | 3.27 EUR |
| 1200+ | 3.25 EUR |
| IPW65R230CFD7AXKSA1 |
|
Hersteller: Infineon Technologies
Description: 650V COOLMOS CFD7A SJ POWER DEVI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
Description: 650V COOLMOS CFD7A SJ POWER DEVI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)