IPW65R420CFDFKSA2 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 240+ | 2.55 EUR |
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Technische Details IPW65R420CFDFKSA2 Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO247-3, Vgs(th) (Max) @ Id: 4.5V @ 300µA, Power Dissipation (Max): 83.3W (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3-41.
Weitere Produktangebote IPW65R420CFDFKSA2 nach Preis ab 2.55 EUR bis 5.97 EUR
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IPW65R420CFDFKSA2 | Infineon Technologies |
 Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R420CFDFKSA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 300µA Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-41 |
auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPW65R420CFDFKSA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 2.55 EUR |
| IPW65R420CFDFKSA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Description: MOSFET N-CH 650V 8.7A TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.97 EUR |
| 30+ | 3.24 EUR |
| 120+ | 2.64 EUR |