IPW90R340C3XKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 240+ | 5.08 EUR |
| 6720+ | 4.6 EUR |
| 10080+ | 4.2 EUR |
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Technische Details IPW90R340C3XKSA1 Infineon Technologies
Description: MOSFET N-CH 900V 15A TO247-3, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3-21, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote IPW90R340C3XKSA1 nach Preis ab 4.51 EUR bis 8.25 EUR
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IPW90R340C3XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 15A Power dissipation: 208W Case: TO247-3 On-state resistance: 0.34Ω Mounting: THT Gate charge: 94nC Kind of channel: enhancement |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW90R340C3XKSA1 | Infineon Technologies |
MOSFETs LOW POWER_LEGACY |
auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW90R340C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 900V 15A TO247-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-21 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW90R340C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| IPW90R340C3XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs LOW POWER_LEGACY
MOSFETs LOW POWER_LEGACY
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.18 EUR |
| 10+ | 5.14 EUR |
| 100+ | 4.58 EUR |
| IPW90R340C3XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-21
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 900V 15A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-21
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.25 EUR |
| 30+ | 4.51 EUR |