IPW90R340C3XKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 240+ | 6.18 EUR |
| 6720+ | 5.59 EUR |
| 10080+ | 5.12 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
240 Stücke
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Technische Details IPW90R340C3XKSA1 Infineon Technologies
Description: MOSFET N-CH 900V 15A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: PG-TO247-3-21, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V.
Weitere Produktangebote IPW90R340C3XKSA1 nach Preis ab 5.37 EUR bis 9.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IPW90R340C3XKSA1 | Infineon Technologies |
 MOSFETs LOW POWER_LEGACY |
auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW90R340C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 900V 15A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO247-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW90R340C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 15A Case: TO247-3 On-state resistance: 0.34Ω Mounting: THT Kind of channel: enhancement Power dissipation: 208W Gate charge: 94nC |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPW90R340C3XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs LOW POWER_LEGACY
MOSFETs LOW POWER_LEGACY
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.73 EUR |
| 10+ | 6.12 EUR |
| 100+ | 5.45 EUR |
| IPW90R340C3XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Description: MOSFET N-CH 900V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.82 EUR |
| 30+ | 5.37 EUR |
| IPW90R340C3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Case: TO247-3
On-state resistance: 0.34Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 208W
Gate charge: 94nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Case: TO247-3
On-state resistance: 0.34Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 208W
Gate charge: 94nC
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)