Technische Details IPZ40N04S5L3R6ATMA1 Infineon Technologies
Description: MOSFET_(20V 40V) PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Tj), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 2V @ 21µA, Supplier Device Package: PG-TSDSON-8-33, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPZ40N04S5L3R6ATMA1 nach Preis ab 0.9 EUR bis 0.9 EUR
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IPZ40N04S5L3R6ATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 40V 87A 8-Pin TSDSON EP T/R Automotive AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPZ40N04S5L3R6ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-TSDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tj) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPZ40N04S5L3R6ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 87A 8-Pin TSDSON EP T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 87A 8-Pin TSDSON EP T/R Automotive AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 725+ | 0.9 EUR |
| IPZ40N04S5L3R6ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tj)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tj)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)