Weitere Produktangebote IPZ60R017C7XKSA1 nach Preis ab 16.68 EUR bis 29.94 EUR
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IPZ60R017C7XKSA1 | Infineon Technologies |
 MOSFETs HIGH POWER_NEW |
auf Bestellung 147 Stücke: Lieferzeit 10-14 Tag (e) |
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IPZ60R017C7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 109A TO247-4 Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-4 Vgs(th) (Max) @ Id: 4V @ 2.91mA Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V Current - Continuous Drain (Id) @ 25°C: 109A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPZ60R017C7XKSA1 |
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Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.09 EUR |
| 25+ | 17.04 EUR |
| 240+ | 16.68 EUR |
| IPZ60R017C7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 109A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: MOSFET N-CH 600V 109A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.94 EUR |
| 30+ | 19.31 EUR |