IPZ60R041P6FKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-4
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Technische Details IPZ60R041P6FKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-4, Part Status: Obsolete, Supplier Device Package: PG-TO247-4, Vgs(th) (Max) @ Id: 4.5V @ 2.96mA, Power Dissipation (Max): 481W (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
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IPZ60R041P6FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 77.5A TO247-4Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO247-4 Vgs(th) (Max) @ Id: 4.5V @ 2.96mA Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPZ60R041P6FKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: MOSFET N-CH 600V 77.5A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
