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IPZ60R070P6FKSA1

IPZ60R070P6FKSA1 Infineon Technologies


Infineon_IPZ60R070P6_DS_v02_00_EN-3165772.pdf Hersteller: Infineon Technologies
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Technische Details IPZ60R070P6FKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 53.5A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V, Power Dissipation (Max): 391W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.72mA, Supplier Device Package: PG-TO247-4, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V.

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IPZ60R070P6FKSA1 IPZ60R070P6FKSA1 Hersteller : Infineon Technologies infineon-ipz60r070p6-ds-v02_00-en.pdffileid5546d4624e765da5014ee3.pdf Trans MOSFET N-CH 600V 53.5A 4-Pin(4+Tab) TO-247 Tube
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IPZ60R070P6FKSA1 IPZ60R070P6FKSA1 Hersteller : Infineon Technologies Infineon-IPZ60R070P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee38f178a0268 Description: MOSFET N-CH 600V 53.5A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
Produkt ist nicht verfügbar