IPZ60R099P6FKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 37.9A TO247-4, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-4, Vgs(th) (Max) @ Id: 4.5V @ 1.21mA, Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc).