IPZA60R037CM8XKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 11.69 EUR |
| 10+ | 9.93 EUR |
| 100+ | 8.27 EUR |
| 480+ | 7.3 EUR |
| 1200+ | 6.56 EUR |
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Technische Details IPZA60R037CM8XKSA1 Infineon Technologies
Description: IPZA60R037CM8XKSA1, Supplier Device Package: PG-TO247-4-U02, Vgs(th) (Max) @ Id: 4.7V @ 680µA, Power Dissipation (Max): 329W (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V, Current - Continuous Drain (Id) @ 25°C: 64A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote IPZA60R037CM8XKSA1 nach Preis ab 6.54 EUR bis 13.22 EUR
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IPZA60R037CM8XKSA1 | Infineon Technologies |
 Description: IPZA60R037CM8XKSA1Supplier Device Package: PG-TO247-4-U02 Vgs(th) (Max) @ Id: 4.7V @ 680µA Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 226 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPZA60R037CM8XKSA1 |
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Hersteller: Infineon Technologies
Description: IPZA60R037CM8XKSA1
Supplier Device Package: PG-TO247-4-U02
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: IPZA60R037CM8XKSA1
Supplier Device Package: PG-TO247-4-U02
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.22 EUR |
| 30+ | 7.74 EUR |
| 120+ | 6.54 EUR |