IQE012N03LM5CGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
MOSFETs OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
| Anzahl | Preis |
|---|---|
| 1+ | 4.1 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.34 EUR |
| 2500+ | 1.32 EUR |
| 5000+ | 1.12 EUR |
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Technische Details IQE012N03LM5CGATMA1 Infineon Technologies
Description: IQE012N03LM5CGATMA1, Packaging: Tape & Reel (TR), Package / Case: 9-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc), Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TTFN-9-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V.
Weitere Produktangebote IQE012N03LM5CGATMA1
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IQE012N03LM5CGATMA1 | Hersteller : Infineon Technologies |
Description: IQE012N03LM5CGATMA1 Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
Produkt ist nicht verfügbar |
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IQE012N03LM5CGATMA1 | Hersteller : Infineon Technologies |
Description: IQE012N03LM5CGATMA1 Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
Produkt ist nicht verfügbar |