| Anzahl | Preis |
|---|---|
| 1+ | 5.53 EUR |
| 10+ | 3.63 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 2.11 EUR |
| 6000+ | 2.01 EUR |
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Technische Details IQE022N06LM5SCATMA1 Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 48µA, Supplier Device Package: PG-WHSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V.
Weitere Produktangebote IQE022N06LM5SCATMA1 nach Preis ab 2.1 EUR bis 5.67 EUR
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IQE022N06LM5SCATMA1 | Infineon Technologies |
 Description: OPTIMOS 5 POWER-TRANSISTOR 60VPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 48µA Supplier Device Package: PG-WHSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
auf Bestellung 5006 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQE022N06LM5SCATMA1 |
|
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
auf Bestellung 5006 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.67 EUR |
| 10+ | 3.7 EUR |
| 100+ | 2.58 EUR |
| 500+ | 2.11 EUR |
| 1000+ | 2.1 EUR |