IR2233PBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 6548 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 24.02 EUR |
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Technische Details IR2233PBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP, Packaging: Bulk, Package / Case: 28-DIP (0.600", 15.24mm), Mounting Type: Through Hole, Operating Temperature: 125°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Inverting, High Side Voltage - Max (Bootstrap): 1200 V, Supplier Device Package: 28-PDIP, Rise / Fall Time (Typ): 90ns, 40ns, Channel Type: 3-Phase, Driven Configuration: Half-Bridge, Number of Drivers: 6, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2V, Current - Peak Output (Source, Sink): 250mA, 500mA, DigiKey Programmable: Not Verified.
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Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Mounting: THT Power: 1.5W Case: DIP28-W Kind of package: tube Operating temperature: -40...125°C Supply voltage: 10...20V DC Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 1.2kV Turn-on time: 750ns Turn-off time: 700ns Output current: -420...200mA Type of integrated circuit: driver Number of channels: 6 Anzahl je Verpackung: 1 Stücke |
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IR2233PBF | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28DIP Packaging: Tube Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Operating Temperature: 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: 28-PDIP Rise / Fall Time (Typ): 90ns, 40ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
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IR2233PBF | Hersteller : Infineon Technologies |
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IR2233PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Mounting: THT Power: 1.5W Case: DIP28-W Kind of package: tube Operating temperature: -40...125°C Supply voltage: 10...20V DC Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 1.2kV Turn-on time: 750ns Turn-off time: 700ns Output current: -420...200mA Type of integrated circuit: driver Number of channels: 6 |
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