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IRF100P219XKMA1 International Rectifier


Infineon-IRF100P219-DS-v01_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
Hersteller: International Rectifier
TRENCH_MOSFETS Транзистори
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Technische Details IRF100P219XKMA1 International Rectifier

Description: MOSFET N-CH 100V TO247AC, Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Obsolete, Supplier Device Package: TO-247AC, Vgs(th) (Max) @ Id: 3.8V @ 278µA, Power Dissipation (Max): 341W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 203A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

Weitere Produktangebote IRF100P219XKMA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IRF100P219XKMA1 IRF100P219XKMA1 Infineon Technologies Infineon-IRF100P219-DS-v01_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Description: MOSFET N-CH 100V TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IRF100P219XKMA1 IRF100P219XKMA1 Infineon Technologies Infineon_IRF100P219_DataSheet_v02_01_EN-2324341.pdf MOSFETs TRENCH >=100V
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IRF100P219XKMA1 Infineon-IRF100P219-DS-v01_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF100P219XKMA1 Infineon_IRF100P219_DataSheet_v02_01_EN-2324341.pdf
Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH