Weitere Produktangebote IRF1310NSPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IRF1310NSPBF | Hersteller : Infineon Technologies |
 MOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nC |
auf Bestellung 711 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1310NSPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 42A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
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