 
IRF1404STRRPBF Infineon Technologies
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 219+ | 2.47 EUR | 
| 500+ | 2.14 EUR | 
| 1000+ | 1.91 EUR | 
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Technische Details IRF1404STRRPBF Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 162A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V. 
Weitere Produktangebote IRF1404STRRPBF nach Preis ab 2.14 EUR bis 2.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|   | IRF1404STRRPBF | Hersteller : Infineon Technologies |  Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | IRF1404STRRPBF | Hersteller : Infineon Technologies |  Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||
| IRF1404STRRPBF | Hersteller : ROCHESTER ELECTRONICS |  Description: ROCHESTER ELECTRONICS - IRF1404STRRPBF - IRF1404 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | Produkt ist nicht verfügbar | ||||||||
|   | IRF1404STRRPBF | Hersteller : Infineon Technologies |  Description: MOSFET N-CH 40V 162A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V | Produkt ist nicht verfügbar | |||||||
|   | IRF1404STRRPBF | Hersteller : INFINEON TECHNOLOGIES |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel | Produkt ist nicht verfügbar |