
IRF1404STRRPBF Infineon Technologies
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
219+ | 2.53 EUR |
500+ | 2.19 EUR |
1000+ | 1.94 EUR |
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Technische Details IRF1404STRRPBF Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 162A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V.
Weitere Produktangebote IRF1404STRRPBF nach Preis ab 2.19 EUR bis 2.53 EUR
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IRF1404STRRPBF | Hersteller : Infineon Technologies |
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auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404STRRPBF | Hersteller : Infineon Technologies |
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IRF1404STRRPBF | Hersteller : ROCHESTER ELECTRONICS |
![]() tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
Produkt ist nicht verfügbar |
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IRF1404STRRPBF | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF1404STRRPBF | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF1404STRRPBF | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |