IRF1607PBF Infineon Technologies


IRF1607PbF.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 142A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
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Technische Details IRF1607PBF Infineon Technologies

Description: MOSFET N-CH 75V 142A TO220AB, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 380W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 85A, 10V, Current - Continuous Drain (Id) @ 25°C: 142A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V.

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IRF1607PBF IRF1607PBF Infineon Technologies Infineon_IRF1607_DataSheet_v01_01_EN-3165949.pdf MOSFET MOSFT 75V 142A 7.5mOhm 210nC
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IRF1607PBF Infineon_IRF1607_DataSheet_v01_01_EN-3165949.pdf
Hersteller: Infineon Technologies
MOSFET MOSFT 75V 142A 7.5mOhm 210nC
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Im Einkaufswagen  Stück im Wert von  UAH