IRF200P222 Infineon Technologies

Description: MOSFET N-CH 200V 182A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 182A (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 82A, 10V, Power Dissipation (Max): 556W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 50 V.