Weitere Produktangebote IRF2204SPBF nach Preis ab 2.72 EUR bis 2.72 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRF2204SPBF | Infineon Technologies |
 Description: MOSFET N-CH 40V 170A D2PAKOperating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V |
auf Bestellung 903 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF2204SPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 170A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Description: MOSFET N-CH 40V 170A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
auf Bestellung 903 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 171+ | 2.72 EUR |