IRF2204SPBF Infineon Technologies
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 78+ | 1.91 EUR |
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Technische Details IRF2204SPBF Infineon Technologies
Description: MOSFET N-CH 40V 170A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V.
Weitere Produktangebote IRF2204SPBF nach Preis ab 1.91 EUR bis 3.10 EUR
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IRF2204SPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK Tube |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2204SPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 170A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
auf Bestellung 903 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF2204SPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK Tube |
auf Bestellung 852 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2204SPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRF2204SPBF - IRF2204 - POWER FIELD-EFFECT TRANSISTOR, tariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 852 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF2204SPBF | Hersteller : International Rectifier |
Trans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK Tube |
auf Bestellung 653 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF2204SPBF | Hersteller : International Rectifier |
Trans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK Tube |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2204SPBF Produktcode: 119472
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRF2204SPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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IRF2204SPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 170A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF2204SPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 40V 170A 3.6mOhm 130nC |
Produkt ist nicht verfügbar |