IRF2804STRLPBF Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.15 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
800 Stücke
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Technische Details IRF2804STRLPBF Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V.
Weitere Produktangebote IRF2804STRLPBF nach Preis ab 2.12 EUR bis 6.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IRF2804STRLPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2804STRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 75A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V |
auf Bestellung 2030 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF2804STRLPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 8800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2804STRLPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 8800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2804STRLPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 499 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2804STRLPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 34400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2804STRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 75A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V |
auf Bestellung 2230 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF2804STRLPBF | Infineon Technologies |
MOSFETs MOSFT 40V 280A 2.3mOhm 160nC Qg |
auf Bestellung 826 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF2804STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 280A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 503 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRF2804STRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.15 EUR |
| IRF2804STRLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
auf Bestellung 2030 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.43 EUR |
| IRF2804STRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 8800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.45 EUR |
| 2400+ | 2.12 EUR |
| IRF2804STRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 8800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.94 EUR |
| IRF2804STRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 189+ | 3.53 EUR |
| IRF2804STRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 34400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 189+ | 3.53 EUR |
| 500+ | 3.13 EUR |
| 1000+ | 2.83 EUR |
| 10000+ | 2.48 EUR |
| IRF2804STRLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
auf Bestellung 2230 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.89 EUR |
| 10+ | 4.5 EUR |
| 50+ | 3.47 EUR |
| 100+ | 3.14 EUR |
| IRF2804STRLPBF |
![]() |
Hersteller: Infineon Technologies
MOSFETs MOSFT 40V 280A 2.3mOhm 160nC Qg
MOSFETs MOSFT 40V 280A 2.3mOhm 160nC Qg
auf Bestellung 826 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.91 EUR |
| 10+ | 3.5 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.45 EUR |
| 800+ | 2.43 EUR |
| IRF2804STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 503 Stücke:
Lieferzeit 14-21 Tag (e)





