IRF2903ZPBF Infineon Technologies
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.82 EUR |
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Technische Details IRF2903ZPBF Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-220AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V.
Weitere Produktangebote IRF2903ZPBF nach Preis ab 1.83 EUR bis 6.28 EUR
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IRF2903ZPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 30V 260A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2903ZPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 260A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2903ZPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 30V 260A 2.4mOhm 160nC Qg |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF2903ZPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRF2903ZPBF - IRF2903Z - TRENCH < 40V tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2903ZPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 260A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2903ZPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 260A Power dissipation: 290W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF2903ZPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF2903ZPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 260A Power dissipation: 290W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |