IRF2903ZPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 6.28 EUR |
| 10+ | 4.12 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.76 EUR |
| 1000+ | 2.32 EUR |
| 2000+ | 2.25 EUR |
| 5000+ | 2.2 EUR |
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Technische Details IRF2903ZPBF Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB, Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 290W (Tc).
Weitere Produktangebote IRF2903ZPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRF2903ZPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 75A TO220ABRds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 290W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF2903ZPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 290W (Tc)
Description: MOSFET N-CH 30V 75A TO220AB
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 290W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH



