IRF3315STRLPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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Technische Details IRF3315STRLPBF Infineon Technologies
Description: MOSFET N-CH 150V 21A D2PAK, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 94W (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).
Weitere Produktangebote IRF3315STRLPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRF3315STRLPBF | Infineon / IR |
MOSFET MOSFT 150V 21A 82mOhm 63.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRF3315STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 21A Power dissipation: 94W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF3315STRLPBF |
![]() |
Hersteller: Infineon / IR
MOSFET MOSFT 150V 21A 82mOhm 63.3nC
MOSFET MOSFT 150V 21A 82mOhm 63.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF3315STRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH



