Technische Details IRF350 IR
Description: MOSFET N-CH 400V 14A TO3, Packaging: Bag, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.
Weitere Produktangebote IRF350 nach Preis ab 34.69 EUR bis 40.81 EUR
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IRF350 | Hersteller : NTE Electronics, Inc |
 Description: MOSFET N-CH 400V 14A TO3Packaging: Bag Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF350 Produktcode: 23682
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Lieblingsprodukt
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Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: TO-3 Uds,V: 400 V Idd,A: 14 A Rds(on), Ohm: 0,3 Ohm JHGF: THT |
Produkt ist nicht verfügbar
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IRF350 | Hersteller : International Rectifier HiRel Products |
Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 |
Produkt ist nicht verfügbar |
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IRF350 | Hersteller : Infineon / IR |
MOSFETs 400V Single N-Channel Hi-Rel |
Produkt ist nicht verfügbar |
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IRF350 | Hersteller : STMicroelectronics |
MOSFETs |
Produkt ist nicht verfügbar |
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IRF350 | Hersteller : Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 150W; TO3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 14A Power dissipation: 150W Case: TO3 Mounting: THT Kind of channel: enhancement Technology: HEXFET® Kind of package: tube |
Produkt ist nicht verfügbar |