IRF350
Produktcode: 23682
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller: IR
Gehäuse: TO-3
Drain-Source-Spannung Uds, V: 400 В
Drain-Strom Idd, A: 14 А
Durchlasswiderstand Rds(on), Ohm: 0,3 Ом
Montage: THT
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF350 IR
- MOSFET, N, TO-3
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:400V
- Cont Current Id:14A
- On State Resistance:0.3ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:TO-3
- Termination Type:Through Hole
- Avalanche Single Pulse Energy Eas:11.3mJ
- Current Iar:14A
- Current Temperature:25`C
- Device Marking:IRF350
- Fixing Centres:30mm
- Full Power Rating Temperature:25`C
- Lead Spacing:11mm
- Max Junction Temperature Tj:150`C
- Max Repetitive Avalanche Energy:15mJ
- Max Voltage Vds:400V
- Max Voltage Vgs th:4V
- Min Junction Temperature, Tj:-55`C
- No. of Pins:2
- No. of Transistors:1
- Power Dissipation:150W
- Power Dissipation Pd:150W
- Pulse Current Idm:56A
- Weight:0.012kg
- Transistor Case Style:TO-3
Weitere Produktangebote IRF350 nach Preis ab 41.28 EUR bis 48.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRF350 | NTE Electronics, Inc |
 Description: MOSFET N-CH 400V 14A TO3Packaging: Bag Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRF350 |
|
Hersteller: NTE Electronics, Inc
Description: MOSFET N-CH 400V 14A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 400V 14A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 48.56 EUR |
| 10+ | 46.14 EUR |
| 20+ | 43.71 EUR |
| 50+ | 41.28 EUR |