IRF3546MTRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 4N-CH 25V 16A/20A 41QFN
Packaging: Bulk
Package / Case: 41-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 41-PQFN (6x8)
Part Status: Obsolete
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 81+ | 6.08 EUR |
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Technische Details IRF3546MTRPBF Infineon Technologies
Description: MOSFET 4N-CH 25V 16A/20A 41QFN, Packaging: Tape & Reel (TR), Package / Case: 41-PowerVFQFN, Mounting Type: Surface Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V, Rds On (Max) @ Id, Vgs: 3.9mOhm @ 27A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: 41-PQFN (6x8), Part Status: Obsolete.
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Description: MOSFET 4N-CH 25V 16A/20A 41QFN Packaging: Tape & Reel (TR) Package / Case: 41-PowerVFQFN Mounting Type: Surface Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: 41-PQFN (6x8) Part Status: Obsolete |
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