Technische Details IRF3709ZS IR
Description: MOSFET N-CH 30V 87A D2PAK, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.25V @ 250µA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V.
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IRF3709ZS Produktcode: 99469
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IR |
 Transistoren > MOSFET N-CHGehäuse: D2PAK (TO-263) Drain-Source-Spannung Uds, V: 30 V Drain-Strom Idd, A: 62 A Durchlasswiderstand Rds(on), Ohm: 6,3 mOhm Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 2130/17 Montage: SMD |
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IRF3709ZS | Infineon Technologies |
Description: MOSFET N-CH 30V 87A D2PAK Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF3709ZS Produktcode: 99469
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: D2PAK (TO-263)
Drain-Source-Spannung Uds, V: 30 V
Drain-Strom Idd, A: 62 A
Durchlasswiderstand Rds(on), Ohm: 6,3 mOhm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 2130/17
Montage: SMD
Transistoren > MOSFET N-CH
Gehäuse: D2PAK (TO-263)
Drain-Source-Spannung Uds, V: 30 V
Drain-Strom Idd, A: 62 A
Durchlasswiderstand Rds(on), Ohm: 6,3 mOhm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 2130/17
Montage: SMD
Produkt ist nicht verfügbar
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.05 EUR |
| 10+ | 1 EUR |
| IRF3709ZS |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 87A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Description: MOSFET N-CH 30V 87A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH