IRF3711PBF Infineon Technologies

Description: MOSFET N-CH 20V 110A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 120W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.