Technische Details IRF3711ZS IR
Description: MOSFET N-CH 20V 92A D2PAK, Current - Continuous Drain (Id) @ 25°C: 92A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.45V @ 250µA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V.
Weitere Produktangebote IRF3711ZS nach Preis ab 1.1 EUR bis 1.13 EUR
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IRF3711ZS Produktcode: 99472
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Lieblingsprodukt
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IR |
 Transistoren > MOSFET N-CHGehäuse: D2Pak (TO-263-3) Uds,V: 20 Idd,A: 65 Rds(on), Ohm: 6.0 mOhm Ciss, pF/Qg, nC: 2150/16 JHGF: SMD |
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IRF3711ZS | Infineon Technologies |
Description: MOSFET N-CH 20V 92A D2PAK Current - Continuous Drain (Id) @ 25°C: 92A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.45V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF3711ZS Produktcode: 99472
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263-3)
Uds,V: 20
Idd,A: 65
Rds(on), Ohm: 6.0 mOhm
Ciss, pF/Qg, nC: 2150/16
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263-3)
Uds,V: 20
Idd,A: 65
Rds(on), Ohm: 6.0 mOhm
Ciss, pF/Qg, nC: 2150/16
JHGF: SMD
Produkt ist nicht verfügbar
| Anzahl | Preis |
|---|---|
| 1+ | 1.13 EUR |
| 10+ | 1.1 EUR |
| IRF3711ZS |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 92A D2PAK
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Description: MOSFET N-CH 20V 92A D2PAK
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH