
auf Bestellung 3519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.85 EUR |
10+ | 1.58 EUR |
25+ | 1.15 EUR |
100+ | 1.11 EUR |
1000+ | 0.91 EUR |
2000+ | 0.90 EUR |
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Technische Details IRF520PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 9.2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRF520PBF-BE3 nach Preis ab 1.03 EUR bis 1.94 EUR
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IRF520PBF-BE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
auf Bestellung 3259 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF520PBF-BE3 | Hersteller : VISHAY |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 721 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF520PBF-BE3 | Hersteller : Vishay |
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