| Anzahl | Privatkunde |
|---|---|
| 119+ | 1.46 EUR |
| 126+ | 1.37 EUR |
| 250+ | 1.24 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.06 EUR |
| 2000+ | 0.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF530PBF Vishay
Description: MOSFET N-CH 100V 14A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Weitere Produktangebote IRF530PBF nach Preis ab 0.65 EUR bis 4.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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IRF530PBF | VISHAY |
  Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 26nC |
auf Bestellung 2455 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF530PBF | Vishay Semiconductors |
MOSFETs TO220 100V 14A N-CH |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF530PBF | Vishay Siliconix |
Description: MOSFET N-CH 100V 14A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 10243 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF530PBF | Vishay |
Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF530PBF |
IRF530PBF Транзисторы HEXFET |
auf Bestellung 10 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRF530PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
auf Bestellung 2455 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 1.81 EUR |
| 86+ | 0.99 EUR |
| 96+ | 0.89 EUR |
| 102+ | 0.84 EUR |
| 250+ | 0.79 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.65 EUR |
| IRF530PBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO220 100V 14A N-CH
MOSFETs TO220 100V 14A N-CH
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.07 EUR |
| IRF530PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 100V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 10243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.88 EUR |
| 10+ | 3.13 EUR |
| 50+ | 2.38 EUR |
| 100+ | 2.13 EUR |
| 500+ | 1.71 EUR |
| IRF530PBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-220AB
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF530PBF |
|
IRF530PBF Транзисторы HEXFET
auf Bestellung 10 Stücke:
Lieferzeit 7-21 Tag (e)