auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 313+ | 0.46 EUR |
| 318+ | 0.43 EUR |
| 323+ | 0.41 EUR |
| 329+ | 0.39 EUR |
| 334+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF530STRLPBF Vishay
Description: MOSFET N-CH 100V 14A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V, Power Dissipation (Max): 3.7W (Ta), 88W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Weitere Produktangebote IRF530STRLPBF nach Preis ab 0.35 EUR bis 3.66 EUR
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IRF530STRLPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 373 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF530STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 14A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF530STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 410 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF530STRLPBF | Hersteller : Vishay Semiconductors |
MOSFETs N-Chan 100V 14 Amp |
auf Bestellung 3913 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF530STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 14A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 2866 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF530STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRF530STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Mounting: SMD Kind of package: reel; tape Case: D2PAK; TO263 Drain current: 10A Gate charge: 26nC On-state resistance: 0.16Ω Power dissipation: 88W Gate-source voltage: ±20V Pulsed drain current: 56A Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Drain-source voltage: 100V |
Produkt ist nicht verfügbar |