Technische Details IRF540SPBF Vishay
Description: VISHAY - IRF540SPBF - Leistungs-MOSFET, n-Kanal, 100 V, 28 A, 0.077 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 28A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 150W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.077ohm, SVHC: Lead (21-Jan-2025).
Weitere Produktangebote IRF540SPBF nach Preis ab 0.99 EUR bis 7.08 EUR
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IRF540SPBF | Vishay |
 Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 110A |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540SPBF | Vishay Semiconductors |
MOSFETs TO263 100V 28A N-CH MOSFET |
auf Bestellung 1863 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF540SPBF | Vishay |
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK |
auf Bestellung 4900 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540SPBF | Vishay Siliconix |
Description: MOSFET N-CH 100V 28A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF540SPBF |
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Hersteller: Vishay
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 3 EUR |
| 69+ | 2.48 EUR |
| 100+ | 2.17 EUR |
| 250+ | 1.9 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.58 EUR |
| IRF540SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.08 EUR |
| 55+ | 1.55 EUR |
| 67+ | 1.27 EUR |
| 100+ | 1.19 EUR |
| 250+ | 1.14 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.99 EUR |
| IRF540SPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO263 100V 28A N-CH MOSFET
MOSFETs TO263 100V 28A N-CH MOSFET
auf Bestellung 1863 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 2.93 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.15 EUR |
| 2000+ | 1.98 EUR |
| IRF540SPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
auf Bestellung 4900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 5.03 EUR |
| 67+ | 2.49 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.34 EUR |
| IRF540SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.08 EUR |
| 10+ | 4.61 EUR |
| 50+ | 3.55 EUR |
| 100+ | 3.21 EUR |
| 500+ | 2.61 EUR |