Technische Details IRF5803TRPBF Infineon Technologies
Description: MOSFET P-CH 40V 3.4A MICRO6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Micro6™(TSOP-6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V.
Weitere Produktangebote IRF5803TRPBF nach Preis ab 0.25 EUR bis 0.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IRF5803TRPBF | Infineon Technologies |
Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R |
auf Bestellung 403 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF5803TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.4A Power dissipation: 1.3W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 816 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF5803TRPBF | International Rectifier/Infineon |
P-канальний ПТ, Udss, В = 40, Id = 3,4 A, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 1110 @ 25, Qg, нКл = 37 @ 10 В, Rds = 112 мОм @ 3,4 А, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Транзистори Корпус: TSOP-6 Од. вим: штAnzahl je Verpackung: 3000 Stücke |
verfügbar 1975 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| IRF5803TRPBF |
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Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R
Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 265+ | 0.65 EUR |
| 354+ | 0.48 EUR |
| IRF5803TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 816 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 116+ | 0.74 EUR |
| 145+ | 0.58 EUR |
| 214+ | 0.39 EUR |
| 248+ | 0.35 EUR |
| 500+ | 0.25 EUR |
| IRF5803TRPBF |
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Hersteller: International Rectifier/Infineon
P-канальний ПТ, Udss, В = 40, Id = 3,4 A, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 1110 @ 25, Qg, нКл = 37 @ 10 В, Rds = 112 мОм @ 3,4 А, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Транзистори Корпус: TSOP-6 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
P-канальний ПТ, Udss, В = 40, Id = 3,4 A, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 1110 @ 25, Qg, нКл = 37 @ 10 В, Rds = 112 мОм @ 3,4 А, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Транзистори Корпус: TSOP-6 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 1975 Stücke:



