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IRF5804TR


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Technische Details IRF5804TR

Description: MOSFET P-CH 40V 2.5A MICRO6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 198mOhm @ 2.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Micro6™(TSOP-6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V.

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IRF5804TR IRF5804TR Hersteller : Infineon Technologies irf5804.pdf Trans MOSFET P-CH Si 40V 2.5A 6-Pin TSOP T/R
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IRF5804TR IRF5804TR Hersteller : Infineon Technologies irf5804.pdf Description: MOSFET P-CH 40V 2.5A MICRO6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Produkt ist nicht verfügbar
IRF5804TR IRF5804TR Hersteller : Infineon / IR international rectifier_irf5804.pdf MOSFET
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