IRF5806TRPBF Infineon Technologies
auf Bestellung 57000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1771+ | 0.31 EUR |
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Technische Details IRF5806TRPBF Infineon Technologies
Description: MOSFET P-CH 20V 4A MICRO6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 86mOhm @ 4A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro6™(TSOP-6), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V.
Weitere Produktangebote IRF5806TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRF5806TRPBF | Hersteller : Infineon / IR |
 MOSFET MOSFT PCh -20V -4A 86mOhm 8.3nC |
auf Bestellung 16549 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF5806TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 20V 4A MICRO6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 86mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro6™(TSOP-6) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V |
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