Technische Details IRF5810TRPBF IR
Description: MOSFET 2P-CH 20V 2.9A 6TSOP, Vgs(th) (Max) @ Id: 1.2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Drain to Source Voltage (Vdss): 20V, Power - Max: 960mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Supplier Device Package: 6-TSOP.
Weitere Produktangebote IRF5810TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRF5810TRPBF | Infineon Technologies |
 Description: MOSFET 2P-CH 20V 2.9A 6TSOPVgs(th) (Max) @ Id: 1.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V Current - Continuous Drain (Id) @ 25°C: 2.9A Drain to Source Voltage (Vdss): 20V Power - Max: 960mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRF5810TRPBF | Infineon / IR |
MOSFET MOSFT DUAL PCh -20V 2.9A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF5810TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 2.9A 6TSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 960mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Description: MOSFET 2P-CH 20V 2.9A 6TSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 960mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF5810TRPBF |
|
Hersteller: Infineon / IR
MOSFET MOSFT DUAL PCh -20V 2.9A
MOSFET MOSFT DUAL PCh -20V 2.9A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH