IRF5852TRPBF Infineon Technologies


IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 960mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IRF5852TRPBF Infineon Technologies

Description: MOSFET 2N-CH 20V 2.7A 6TSOP, Part Status: Obsolete, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.25V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Drain to Source Voltage (Vdss): 20V, Power - Max: 960mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).

Weitere Produktangebote IRF5852TRPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IRF5852TRPBF International Rectifier irf5852pbf.pdf TSOP-6 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5852TRPBF IRF5852TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5852TRPBF IRF5852TRPBF Infineon / IR irf5852-1169234.pdf MOSFET MOSFT DUAL NCh 20V 2.7A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5852TRPBF irf5852pbf.pdf
Hersteller: International Rectifier
TSOP-6 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5852TRPBF IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5852TRPBF irf5852-1169234.pdf
Hersteller: Infineon / IR
MOSFET MOSFT DUAL NCh 20V 2.7A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH