Technische Details IRF60R217 Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 50µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V.
Weitere Produktangebote IRF60R217 nach Preis ab 0.7 EUR bis 2.83 EUR
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IRF60R217 | Infineon Technologies |
 Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF60R217 | Infineon Technologies |
Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF60R217 | Infineon Technologies |
MOSFETs 60V, 58A, 9.9 mOhm 40 nC Qg |
auf Bestellung 3413 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF60R217 | Infineon Technologies |
Description: MOSFET N-CH 60V 58A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V |
auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF60R217 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R
Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.7 EUR |
| IRF60R217 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R
Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 463+ | 1.19 EUR |
| 514+ | 1.05 EUR |
| 1000+ | 0.95 EUR |
| 10000+ | 0.83 EUR |
| IRF60R217 |
|
Hersteller: Infineon Technologies
MOSFETs 60V, 58A, 9.9 mOhm 40 nC Qg
MOSFETs 60V, 58A, 9.9 mOhm 40 nC Qg
auf Bestellung 3413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.53 EUR |
| 10+ | 1.72 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.93 EUR |
| 2000+ | 0.83 EUR |
| IRF60R217 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.83 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.21 EUR |